1000v q3-class hiperfet? power mosfet in smpd technology august 2012 new pr odu c t b rief more power, less package (ultra-low pro?le, energy e?cient, and rugged) o ver view the 1000v/30a q3-class hiperfet tm power mosfet is now available in the ixys surface mount power device (smpd) package. the device can be easily surface - mounted on a printed circuit board (pcb), using a standard pick-and-place and re?ow soldering process. no costly screws, cables, bus-bars or hand soldered contacts are needed. weighing only 8g, it is much lighter (typically by 50%) than comparable conventonal power modules, enabling a lower carbon footprint for end users. this is one of the key green initatves of ixys corporaton as it develops new products lighter in weight for the cleantech industry. due to its new compact and high performance smpd package, the MMIX1F44N100Q3 mosfet exhibits a low package inductance and high current handling capability. a ceramic isolaton of 2500v is achieved with the direct copper bond (dcb) substrate technology?an electrically isolated tab is provided for heat sinking. the q3-class is a direct result of combining the latest polarhv tm technology platorm with advanced double metal constructon, resultng in an optmal combinaton of low on-state resistance (r ds(on) ) and gate charge (q g ). additonally the device has a low gate-to-drain (miller) charge (q gd ) and low intrinsic gate resistance (r gi ). these enhancements lower gate drive requirements and switching losses. what?s more, the power switching capability and ruggedness of the device are further enhanced by the proven hiperfet tm process, yielding a power mosfet with a fast intrinsic rect?er; the result is a low reverse recovery charge (q rr ), an ability to sustain hard-switching operatons, and an excellent commutatng dv/dt ratng (up to 50v/ns). these featured diode propertes translate into a faster transient response, an increase in power e?ciency, and higher operatng frequencies. other bene?cial product features include a low juncton-to-case thermal resistance (r thjc(max) ) of 0.18 c/w and high avalanche energy (e as ) ratng of 4 joules. the new power mosfet is well suited for such applicatons as, among others, dc-dc converters, batery chargers, switch-mode and resonant power supplies, dc choppers, temperature and lightng controls, and high frequency plasma generators. in partcu - lar, the enhanced dv/dt ratng and high avalanche energy capability mean additonal safety margins for stresses encountered in high voltage industrial switching applica - tons, improving the long-term reliability of these systems. www .ixy s.c om applications dc-dc converters batery chargers switching and resonant power supplies dc choppers temperature and lightng controls features low r ds(on) and gate charge (q g ) low intrinsic gate resistance fast intrinsic rect?er excellent dv/dt performance high power density high avalanche energy ratng smpd advantages ultra-low and compact package pro?le (5.3mm height x 24.8mm length x 32.3mm width) surface mountable via standard re?ow process low package weight (8g) 2500v ceramic isolaton (dcb) low package inductance excellent thermal performance high power cycling capability p o wer
www .ixy s.c om pbnq3smpd_1_0 august 2012 lead free rohs compliant the above ?gure accentuates the compact and low-pro?le nature of the device. compared to a conventonal high power package such as the sot-227, the ixys smpd features ? the weight and 1/3 the volume and provides similar electrical and thermal characteristcs. ultra-low pro?le smpd package ultra-low pro?le smpd height=0.209? sot-227 height=0.351? to-264 height=0.19? plus247 height=0.19? figure 3 illustrates a batery charger circuit that utlizes a half-bridge asymmetri - cal forward converter topology. commonly implemented on the primary side of 220vac o?ine switch-mode power supplies, it consists of a primary rect?er, a control unit (dc-dc converter, mcu, mosfet driver ), and a half-bridge asymmetrical forward converter. two q3-class smpd devices, MMIX1F44N100Q3 (m1 & m2), form the forward converter stage of the circuit, providing a reliable and energy-e?cient power conversion. figur e 3: ba e ry cha rg er cir cuit d3 d4 l1 t1 m2 m1 d2 d1 c1 mc u dc-dc conver te r mosfet driver c2 to smpd q3-class hiperfet power mosfet summary table v dss max (v) i d(cont) t c =25c (a) c iss typ (pf) q g typ (nc) t rr max (ns) p d (w) r thjc max ( o c/w) package style part number r ds(on) max t j =25c () 1000 30 13600 264 300 694 0.18 smpd MMIX1F44N100Q3 0.245 vac input applicaton circuits figure 1: smps - half-bridge resonant-mode conv erter figure 1 illustrates a simpli?ed smps circuit diagram that uses an llc resonant converter as the primary power conversion element of the circuit. the indicated smps circuit consists of a primary rect?er, power factor correcton circuit, control unit (power supply, mcu, and mosfet driver), llc half-bridge resonant converter, isolaton transformer, and secondary rect?er stage. two q3-class smpd power mosfets (MMIX1F44N100Q3) are paired to form the llc half-bridge resonant converter stage to ensure a fast, space-saving, and energy - e?cient power switching operaton. figure 2: smps - hf full-bridge switch-mode conver ter figure 2 depicts a basic hf switch-mode power supply for industrial applicatons. this circuit topology consists of a primary rect?er, power factor correcton circuit, control unit (power supply, mcu, and mosfet driver ), full-bridge dc-dc converter and load. an ac power source is converted into a dc value via the bridge rect?er stage. this dc value is then processed via the pfc boost stage to keep the main current and voltage in phase and provide a dc bus voltage which is normally higher than the rect?ed output. this dc voltage is then fed into a full-bridge converter to drive a load. four q3-class power mosfets (MMIX1F44N100Q3) are used to implement the full-bridge converter stage (m1-m4), providing an energy-e?cient power switching operaton capable of hard switching speeds of up to 1 mhz. applicaton circuits legend vac input vac input direct copper bond (dcb) isolaton ? provides 2500v ceramic isolaton ? improves temperature and power cycling capabilites ? reduces emi/rfi due to low coupling capacitance between die and heat sink ? lowers thermal resistance (r thjs ) ? allows new circuit con?guratons
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